DMP4047LFDE-7【PDF 2/6 页】MOSF P CH 40V 3.3A U-DFN2020-6E

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

DMP4047LFDE

Maximum Ratings (@T A = +25°C, unless otherwise specified.)

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V DSS

V GSS

Value

-40

±20

Units

V

V

Continuous Drain Current (Note 5) V GS = 10V

Continuous Drain Current (Note 6) V GS = 10V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Maximum Body Diode Continuous Current

Steady

State

t<5s

Steady

State

t<5s

T A = +25°C

T A = +70°C

T A = +25°C

T A = +70°C

T A = +25°C

T A = +70°C

T A = +25°C

T A = +70°C

I D

I D

I D

I D

I DM

I S

-3.3

-2.6

-5.3

-4.2

-6.0

-4.8

-9.5

-7.6

-40

3

A

A

A

A

A

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

T A = +25°C

T A = +70°C

Steady state

t<5s

T A = +25°C

T A = +70°C

Steady state

t<5s

P D

R θ JA

P D

R θ JA

R θ JC

T J, T STG

0.7

0.42

180

76

2.1

1.3

58

25

10.2

-55 to +150

W

°C/W

W

°C/W

°C

Electrical Characteristics (@T A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T J = +25°C

Gate-Source Leakage

BV DSS

I DSS

I GSS

-40

—

—

—

—

—

—

1

±100

V

μA

nA

V GS = 0V, I D = 250 μ A

V DS = -40V, V GS = 0V

V GS = ±20V, V DS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V GS(th)

R DS (ON)

|Y fs |

V SD

-1.0

—

—

—

—

26

36

5.2

0.75

-2.2

33

50

—

1.2

V

m Ω

S

V

V DS = V GS , I D = 250 μ A

V GS = -10V, I D = -4.4A

V GS = -4.5V, I D = -3.7A

V DS = -15V, I D = -4.4A

V GS = 0V, I S = -3.9A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (V GS = -4.5V)

Total Gate Charge (V GS = -10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

C iss

C oss

C rss

R g

Q g

Q g

Q gs

Q gd

t D(on)

t r

t D(off)

t f

t rr

Q rr

—

—

—

—

—

—

—

—

—

—

—

—

—

—

1382

103

81

7.7

11.2

23.2

3.3

3.9

18.4

28.2

38.8

28.6

15.4

5.4

—

—

—

—

—

—

—

—

—

—

—

—

—

—

pF

pF

pF

?

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

V DS = -20V, V GS = 0V,

f = 1.0MHz

V DS = 0V, V GS = 0V, f = 1MHz

V DS = -20V, I D = -4.9A

V DS = -20V, I D = -3.9A

V GS = 4.5V, R G = 1 ?

I F = -3.9A, di/dt = 100A/ μ s

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

DMP4047LFDE

D atasheet number: DS35777 Rev. 5 - 2

2 of 6

www.diodes.com

July 2012

? Diodes Incorporated

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

DMP4050SSD-13 MOSFET 2P-CH 40V 4A SO8

DMP4050SSS-13 MOSFET P-CH 40V 4.4A SO8

DMP4051LK3-13 MOSFET P-CH 40V 7.2A DPAK

DMP57D5UFB-7 MOSFET P-CH 50V 200MA 3-DFN

DMP58D0LFB-7B MOSFET P-CH 50V 180MA 3-DFN

DMP58D0SV-7 MOSFET P-CH 50V 160MA SOT-563

DMS2120LFWB-7 MOSFET P-CH 20V 2.9A 8DFN

DMS2220LFDB-7 MOSFET P-CH 20V 3.5A 6-DFN

相关代理商/技术参数

DMP4047SSD-13 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 40V 5.1A 8-SOIC

DMP4050SSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

DMP4050SSD-13 功能描述:MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

DMP4050SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V P-CHANNEL ENHANCEMENT MODE MOSFET

DMP4050SSS-13 功能描述:MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

DMP4051LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V P-CHANNEL ENHANCEMENT MODE MOSFET

DMP4051LK3_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V P-CHANNEL ENHANCEMENT MODE MOSFET

DMP4051LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube